Part Number Hot Search : 
SMC13 UPC8195K BD890YS 2SD1697 T70P2 203013 24C25 SK304
Product Description
Full Text Search
 

To Download UT70P02L-TN3-R Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  unisonic technologies co., ltd ut70p02 power mosfet www.unisonic.com.tw 1 of 5 copyright ? 2008 unisonic technologies co., ltd qw-r502-209.a p-channel enhancement mode power mosfet ? description the ut70p02 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) = 6m ? @v gs = -10 v * low capacitance * low gate charge * fast switching capability * avalanche energy specified ? symbol 1.gate 3.source 2.drain *pb-free plating product number: ut70p02l ? ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing ut70p02-tn3-r UT70P02L-TN3-R to-252 g d s tape reel ut70p02-tn3-t ut70p02l-tn3-t to-252 g d s tube
ut70p02 power mosfet unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-209.a ? absolute maximum ratings (t a =25c unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -25 v gate-source voltage v gss 20 v continuous drain current , v gs =4.5v t c =25c i d -75 a pulsed drain current (note 1) i dm -350 a power dissipation @ t c =25c p d 107 w junction temperature t j +175 w/ strong temperature t stg -55 ~ +175 note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit junction-to-ambient ja 110 /w junction-to-case jc 1.4 /w ? electrical characteristics (t j =25c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =-250 a -25 v breakdown voltage temperature coefficient bv dss / t j reference to 25 , i d =-1ma -0.018 v/ drain-source leakage current i dss v ds =-30 v, v gs =0 v, t j =25c -1 a gate-body leakage current i gss v gs = 20 v 100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250 a -1 -3 v v gs =-10 v, i d =-10 a 7 static drain-source on-resistance (note 2) r ds(on) v gs =-4.5 v, i d =-10 a 10 m ? dynamic parameters input capacitance c iss 2700 4200 pf output capacitance c oss 550 pf reverse transfer capacitance c rss v ds =-25 v, v gs =0 v, f=1.0mhz 380 pf switching parameters total gate charge(note 2) q g 33 52 nc gate source charge q gs 7.5 nc gate drain ("miller") charge q gd v ds =-24 v, v gs =-4.5 v, i d =-30 a 24 nc turn-on delay time(note 2) t d(on) 11.2 ns turn-on rise time t r 77 ns turn-off delay time t d(off) 35 ns turn-off fall-time t f v gs =-10 v, v ds =-15 v, r d =0.5 ? , i d =-30 a , r g =3.3 ? 67 ns source- drain diode ratings and characteristics forward on voltage(note 2) v sd i s =-10 a,v gs =0v -1.3 v reverse recovery time t rr 28 ns reverse recovery charge q rr i s =-30 a, v gs =0 v, di/dt=100 a/ s 10 nc notes: 1.pulse width limited by safe operating area. 2.pulse width 300us , duty cycle 2%.
ut70p02 power mosfet unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-209.a ? typical characteristics drain current,-i d (a) drain current,-i d (a) 0.5 -50 25 100 175 13 11 24 6 812 on-resistance,r ds(on) (m ? ) on-resistance vs. gate voltage gate-to-source voltage,-v gs (v) normalized r ds(on) normalized on-resistance vs. junction temperature junction temperature,t j ( ) 1.0 1.5 2.0 i d =-20a v g =-10v i d =-20a t c =25 10 9 7 5 3 gate threshold voltage,-v gs(th) (v) reverse drain current,-i s (a)
ut70p02 power mosfet unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-209.a ? typical characteristics(cont.) gate to source voltage,-v gs (v) capacitance (pf) 1 0.1 0.01 0.00001 0.0001 0.001 0.01 0.1 1 pulse width,t (s) effective transient thermal impedance duty factor=t/t peak t j =p dm jc +t c p dm t t single pulse d=0.5 0.2 0.1 0.05 0.02 0.01 10 drain current,-i d (a)
ut70p02 power mosfet unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-209.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


▲Up To Search▲   

 
Price & Availability of UT70P02L-TN3-R

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X